BF1100R,215 datasheet

Маркировка

BF1100R,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1100R,215 Configuration: Dual Continuous Drain Current: 0.03 A Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 14 V Frequency: 800MHz Gain: - Gate-source Breakdown Voltage: 13.2 V ID_COMPONENTS: 3737829 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 2dB Package / Case: SOT-143R Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 9V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 14 V Gate-Source Breakdown Voltage: 13.2 V Factory Pack Quantity: 3000 Part # Aliases: BF1100R T/R Other Names: 934036560215::BF1100R T/R::BF1100R T/R
Количество страниц

15 шт.
Формат

PDF
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146,49 KB